參數(shù)資料
型號(hào): M36L0R7050B0ZAQE
廠商: 意法半導(dǎo)體
英文描述: ER 23C 16 12 8 4 SKT RECP WALL
中文描述: 128兆位(多銀行,多層次,突發(fā))閃存32兆位(200萬(wàn)× 16)移動(dòng)存儲(chǔ)芯片,1.8V電源多芯片封裝
文件頁(yè)數(shù): 15/18頁(yè)
文件大?。?/td> 406K
代理商: M36L0R7050B0ZAQE
15/18
M36L0R7050T0, M36L0R7050B0
PACKAGE MECHANICAL
Figure 7. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Bottom View Outline
Note: Drawing is not to scale.
Table 10. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Package Data
millimeters
Symbol
inches
Typ
Min
Max
Typ
Min
Max
A
1.200
0.0472
A1
0.200
0.0079
A2
0.850
0.0335
b
0.350
0.300
0.400
0.0138
0.0118
0.0157
D
8.000
7.900
8.100
0.3150
0.3110
0.3189
D1
5.600
0.2205
ddd
0.100
0.0039
E
10.000
9.900
10.100
0.3937
0.3898
0.3976
E1
7.200
0.2835
E2
8.800
0.3465
e
0.800
0.0315
FD
1.200
0.0472
FE
1.400
0.0551
FE1
0.600
0.0236
SD
0.400
0.0157
SE
0.400
0.0157
A2
A1
A
BGA-Z42
ddd
D
E
e
b
SE
FD
E2
D1
SD
BALL "A1"
E1
FE
FE1
相關(guān)PDF資料
PDF描述
M36L0R7050T0ZAQE AB 6C 2#0 4#4 SKT RECP
M36L0R7050T0ZAQT 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050T0ZAQF 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36W108 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36L0R7050B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050B1ZAQE 制造商:Micron Technology Inc 功能描述:128M (8MX16) FLASH, 32M PSRAM, 1.8V, TFBGA88, IND, HAZMAT - Trays
M36L0R7050B3ZAQE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36L0R7050B3ZAQF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel