參數(shù)資料
型號(hào): M36W216BI85ZA6
廠商: NUMONYX
元件分類(lèi): 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
文件頁(yè)數(shù): 1/62頁(yè)
文件大小: 380K
代理商: M36W216BI85ZA6
1/62
PRELIMINARY DATA
November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M36W216TI
M36W216BI
16 Mbit (1Mb x16, Boot Block) Flash Memory
and 2 Mbit (128Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
MULTIPLE MEMORY PRODUCT
– 16 Mbit (1Mb x 16) Boot Block Flash Memory
– 2 Mbit (128Kb x 16) SRAM
SUPPLY VOLTAGE
–VDDF =VDDS = 2.7V to 3.3V
–VDDQF =VDDS = 2.7V to 3.3V
–VPPF = 12V for Fast Program (optional)
ACCESS TIME: 70ns, 85ns
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W216TI: 88CEh
– Bottom Device Code, M36W216BI: 88CFh
FLASH MEMORY
MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
PROGRAMMING TIME
–10
s typical
– Double Word Programming Option
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
–WPF for Block Lock-Down
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
COMMON FLASH INTERFACE
– 64 bit Security Code
SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
SRAM
2 Mbit (128K x 16 bit)
ACCESS TIME: 70ns
LOW VDDS DATA RETENTION: 1.5V
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
12 x 8mm
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