參數(shù)資料
型號(hào): M36W216BI85ZA6
廠(chǎng)商: NUMONYX
元件分類(lèi): 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
文件頁(yè)數(shù): 40/62頁(yè)
文件大?。?/td> 380K
代理商: M36W216BI85ZA6
45/62
M36W216TI, M36W216BI
Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E1S or UBS /LBS Controlled
Table 24. SRAM Low VDDS Data Retention Characteristic
Note: 1. All other Inputs VIH ≤ VDDS –0.2V or VIL ≤ 0.2V.
2. Sampled only. Not 100% tested.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
IDDDR
Supply Current (Data
Retention)
VDDS = 1.5V, E1S ≥ VDDS – 0.2V,
VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V
310
A
VDR
Supply Voltage (Data
Retention)
1.5
3.3
V
tCDR
Chip Disable to Power Down
E1S ≥ VCCS – 0.2V, E2S ≤ 0.2V
0ns
tR
Operation Recovery Time
70
ns
AI07918
E1S or
UBS,LBS
tCDR
VDDS
tR
DATA RETENTION MODE
V
DDS (min)
V
DDS (min)
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