參數(shù)資料
型號(hào): M36W216BI85ZA6
廠商: NUMONYX
元件分類: 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
文件頁數(shù): 39/62頁
文件大?。?/td> 380K
代理商: M36W216BI85ZA6
M36W216TI, M36W216BI
44/62
Table 23. SRAM Write AC Characteristics
Symbol
Alt
Parameter
SRAM
Unit
Min
Max
tAVAV
tWC
Write Cycle Time
70
ns
tAVE1L,
tAVE2H,
tAVWL
tAS
Address Valid to Beginning of Write
0
ns
tAVWH
tAW
Address Valid to Write Enable High
60
ns
tBLWH
tBLE1H
tBLE2L
tAVBH
tBW
UBS,LBS Valid to End of Write
60
ns
tDVE1H,
tDVE2L,
tDVWH
tDVBH
tDW
Input Valid to End of Write
30
ns
tE1HAX,
tE2LAX,
tWHAX
tWR
End of Write to Address Change
0
ns
tE1HDZ,
tE2LDZ,
tWHDZ
tBHDZ
tHD
Address Transition to End of Write
0
ns
tE1LEIH,
tE1LWH
tCW1
Chip Enable 1 Low to End of Write
60
ns
tE2HE2L
tE2HWH
tCW2
Chip Enable 2 High to End of Write
60
ns
tWHQX
tDH
Write Enable High to Input Transition
10
ns
tWLQZ
tWHZ
Write Enable Low to Output Hi-Z
25
ns
tWLWH
tWLE1H
tWLE2L
tWP
Write Enable Pulse Width
45
ns
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