參數(shù)資料
型號: M36W216BI85ZA6
廠商: NUMONYX
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
文件頁數(shù): 43/62頁
文件大?。?/td> 380K
代理商: M36W216BI85ZA6
M36W216TI, M36W216BI
48/62
Table 29. CFI Query System Interface Information
Offset
Data
Descriptio n
Value
1Bh
0027h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
0036h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2n
s
16
s
20h
0004h
Typical time-out for Double Word Program = 2n
s
16
s
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
23h
0005h
Maximum time-out for word program = 2n times typical
512
s
24h
0005h
Maximum time-out for Double Word Program = 2n times typical
512
s
25h
0003h
Maximum time-out per individual block erase = 2n times typical
8s
26h
0000h
Maximum time-out for chip erase = 2n times typical
NA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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