參數(shù)資料
型號(hào): M50FW002K
廠商: 意法半導(dǎo)體
英文描述: 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory
中文描述: 2兆位的256Kb × 8,啟動(dòng)塊3V電源閃存固件集線器
文件頁(yè)數(shù): 29/39頁(yè)
文件大?。?/td> 254K
代理商: M50FW002K
29/39
M50FW002
Table 25. Write AC Characteristics (A/A Mux Interface)
Note: 1. Sampled only, not 100% tested.
2. Applicable if V
PP
is seen as a logic input (V
PP
< 3.6V).
Figure 13. Write AC Waveforms (A/A Mux Interface)
Symbol
Parameter
Test Condition
Value
Unit
t
WLWH
Write Enable Low to Write Enable High
Min
100
ns
t
DVWH
Data Valid to Write Enable High
Min
50
ns
t
WHDX
Write Enable High to Data Transition
Min
5
ns
t
AVCL
Row Address Valid to RC Low
Min
50
ns
t
CLAX
RC Low to Row Address Transition
Min
50
ns
t
AVCH
Column Address Valid to RC High
Min
50
ns
t
CHAX
RC High to Column Address Transition
Min
50
ns
t
WHWL
Write Enable High to Write Enable Low
Min
100
ns
t
CHWH
RC High to Write Enable High
Min
50
ns
t
VPHWH(1)
V
PP
High to Write Enable High
Min
100
ns
t
WHGL
Write Enable High to Output Enable Low
Min
30
ns
t
WHRL
Write Enable High to RB Low
Min
0
ns
t
QVVPL(1,2)
Output Valid, RB High to V
PP
Low
Min
0
ns
AI04194
tCLAX
tCHAX
tWHDX
tDVWH
VALID SRD
A0-A10
G
DQ0-DQ7
RC
tCHWH
tWHRL
C1
W
R1
tAVCL
tAVCH
R2
C2
tWLWH
tWHWL
RB
VPP
tVPHWH
tWHGL
tQVVPL
DIN1
DIN2
Write erase or
program setup
Write erase confirm or
valid address and data
Automated erase
or program delay
Read Status
Register Data
Ready to write
another command
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