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參數(shù)資料
| 型號： | M58LW64D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（和8Mb × 8，4Mb的x16插槽，統(tǒng)一座）3V電源快閃記憶體 |
| 文件頁數(shù)： | 19/50頁 |
| 文件大?。?/td> | 783K |
| 代理商： | M58LW64D |
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19/50
M58LW064D
Table 8. Byte-Wide Read Protection Register
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Effective byte programming time 6μs, effective word programming time 12μs.
4. Maximum value measured at worst case conditions for both temperature and V
DD
after 100,000 program/erase cycles.
5. Maximum value measured at worst case conditions for both temperature and V
DD
.
Word
Use
A8
A7
A6
A5
A4
A3
A2
A1
Lock
Factory, User
1
0
0
0
0
0
0
0
Lock
Factory, User
1
0
0
0
0
0
0
0
0
Factory (Unique ID)
1
0
0
0
0
0
0
1
1
Factory (Unique ID)
1
0
0
0
0
0
0
1
2
Factory (Unique ID)
1
0
0
0
0
0
1
0
3
Factory (Unique ID)
1
0
0
0
0
0
1
0
4
Factory (Unique ID)
1
0
0
0
0
0
1
1
5
Factory (Unique ID)
1
0
0
0
0
0
1
1
6
Factory (Unique ID)
1
0
0
0
0
1
0
0
7
Factory (Unique ID)
1
0
0
0
0
1
0
0
8
User
1
0
0
0
0
1
0
1
9
User
1
0
0
0
0
1
0
1
A
User
1
0
0
0
0
1
1
0
B
User
1
0
0
0
0
1
1
0
C
User
1
0
0
0
0
1
1
1
D
User
1
0
0
0
0
1
1
1
E
User
1
0
0
0
1
0
0
0
F
User
1
0
0
0
1
0
0
0
Parameters
M58LW064D
Unit
Min
Typ
(1,2)
Max
(2)
Block (1Mb) Erase
1.2
4.8
(4)
s
Chip Program (Write to Buffer)
49
145
(4)
s
Chip Erase Time
74
220
(4)
s
Program Write Buffer
192
(3)
576
(4)
μs
Word/Byte Program Time
(Word/Byte Program command)
16
48
(4)
μs
Program Suspend Latency Time
1
20
(5)
μs
Erase Suspend Latency Time
1
25
(5)
μs
Block Protect Time
18
30
(5)
μs
Blocks Unprotect Time
0.75
1.2
(5)
s
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
20
years
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