參數(shù)資料
型號: M58LW64D
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述: 64兆位(和8Mb × 8,4Mb的x16插槽,統(tǒng)一座)3V電源快閃記憶體
文件頁數(shù): 26/50頁
文件大小: 783K
代理商: M58LW64D
M58LW064D
26/50
Figure 9. Random Read AC Waveforms
Note: 1. V
IH
= Device Disabled (first edge of E0, E1 or E2), V
IL
= Device Enabled (first edge of E0, E1 or E2). Refer to
Table 2.
for more
details.
2. BYTE can be Low or High.
Table 15. Random Read AC Characteristics.
Symbol
Parameter
M58LW064D
Unit
110
t
AVAV
Address Valid to Address Valid
Min
110
ns
t
AVQV
Address Valid to Output Valid
Max
110
ns
t
AXQX
Address Transition to Output Transition
Min
0
ns
t
BLQV
Byte Low (or High) to Output Valid
Max
1
μs
t
BLQZ
Byte Low (or High) to Output Hi-Z
Max
1
μs
t
EHQX
Chip Enable High to Output Transition
Min
0
ns
t
EHQZ
Chip Enable High to Output Hi-Z
Max
25
ns
t
ELBL
Chip Enable Low to Byte Low (or High)
Max
10
ns
t
ELQX
Chip Enable Low to Output Transition
Min
0
ns
t
ELQV
Chip Enable Low to Output Valid
Max
110
ns
t
GHQX
Output Enable High to Output Transition
Min
0
ns
t
GHQZ
Output Enable High to Output Hi-Z
Max
15
ns
t
GLQX
Output Enable Low to Output Transition
Min
0
ns
t
GLQV
Output Enable Low to Output Valid
Max
25
ns
AI06213b
E2, E1, E0
(1)
G
A0-A22
DQ0-DQ15
VALID
tAXQX
tELQX
tAVQV
tGLQV
tGLQX
tEHQZ
tEHQX
tGHQX
OUTPUT
tAVAV
tGHQZ
tELQV
BYTE
(2)
tELBL
tBLQV
tBLQZ
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