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參數(shù)資料
| 型號： | M58WR032FB60ZB6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 32/86頁 |
| 文件大小： | 1306K |
| 代理商： | M58WR032FB60ZB6E |
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M58WR032FT, M58WR032FB
32/86
other modes, WAIT is always asserted (except for
Read Array mode).
See
Table 21., Synchronous Read AC Character-
istics
, and
Figure 12., Synchronous Burst Read
AC Waveforms
, for details.
Synchronous Burst Read Suspend.
A
chronous Burst Read operation can be suspend-
ed, freeing the data bus for other higher priority
devices. It can be suspended during the initial ac-
cess latency time
(before data is output) in which
case the initial latency time can be reduced to ze-
ro, or after the device has output data. When the
Synchronous Burst Read operation is suspended,
internal array sensing continues and any previous-
ly latched internal data is retained. A burst se-
quence can be suspended and resumed as often
as required as long as the operating conditions of
the device are met.
A Synchronous Burst Read operation is suspend-
ed when E is low and the current address has
been latched (on a Latch Enable rising edge or on
a valid clock edge). The clock signal is then halted
at V
IH
or at V
IL
, and G goes high.
When G becomes low again and the clock signal
restarts, the Synchronous Burst Read operation is
resumed exactly where it stopped.
Syn-
WAIT being gated by E remains active and will not
revert to high-impedance when G goes high. So if
two or more devices are connected to the system’s
READY signal, to prevent bus contention the
WAIT signal of the Flash memory should not be di-
rectly connected to the system’s READY signal.
See
Table 21., Synchronous Read AC Character-
istics
and
Figure 14., Synchronous Burst Read
Suspend AC Waveforms
, for details.
Single Synchronous Read Mode
Single Synchronous Read operations are similar
to Synchronous Burst Read operations except that
only the first data output after the X latency is valid.
Synchronous Single Reads are used to read the
Electronic Signature, Status Register, CFI, Block
Protection Status, Configuration Register Status
or Protection Register. When the addressed bank
is in Read CFI, Read Status Register or Read
Electronic Signature mode, the WAIT signal is al-
ways asserted.
See
Table 21., Synchronous Read AC Character-
istics
and
Figure 13., Single Synchronous Read
AC Waveforms
, for details.
相關(guān)PDF資料 |
PDF描述 |
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| M58WR032FB60ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB60ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6 | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6E | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR032FB60ZB6F | 功能描述:閃存 32MB 1.8V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR032FB60ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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