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參數(shù)資料
| 型號(hào)： | M58WR032FB60ZB6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 71/86頁(yè) |
| 文件大小： | 1306K |
| 代理商： | M58WR032FB60ZB6E |
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M58WR032FT, M58WR032FB
Figure 24. Quadruple Word Program Flowchart and Pseudo Code
Note: 1. Status check of SR1 (Protected Block), SR3 (V
PP
Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1.
4. Any address within the bank can equally be used.
Write 56h
AI06977b
Start
Write Address 1
& Data 1 (3, 4)
Read Status
Register (4)
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
Write Address 2
& Data 2 (3)
quadruple_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2,
addressToProgram3, dataToProgram3,
addressToProgram4, dataToProgram4)
{
writeToFlash (addressToProgram1, 0x56);
/*see note (4) */
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
writeToFlash (addressToProgram3, dataToProgram3) ;
/*see note (3) */
writeToFlash (addressToProgram4, dataToProgram4) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (addressToProgram) ;
/"see note (4) "/
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR==1) /*program to protect block error */
error_handler ( ) ;
}
Write Address 3
& Data 3 (3)
Write Address 4
& Data 4 (3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58WR032FB60ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB60ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6 | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6E | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR032FB60ZB6F | 功能描述:閃存 32MB 1.8V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR032FB60ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6E | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6F | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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