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參數(shù)資料
| 型號(hào)： | M58WR032FB60ZB6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 67/86頁 |
| 文件大小： | 1306K |
| 代理商： | M58WR032FB60ZB6E |
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M58WR032FT, M58WR032FB
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, see
Table 28.
and
Table 29.
Table 39. Bank and Erase Block Region 2 Information
(P+2E)h = 67h
01h
Bank Regions 1 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+2F)h = 68h
03h
Bank Region 1 (Erase Block Type 2): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
M58WR032FT (top)
M58WR032FB (bottom)
Description
Offset
Data
Offset
Data
(P+28)h = 61h
01h
(P+30)h = 69h
07h
Number of identical banks within Bank Region 2
(P+29)h = 62h
00h
(P+31)h = 6Ah
00h
(P+2A)h = 63h
11h
(P+32)h = 6Bh
11h
Number of program or erase operations allowed in Bank
Region 2:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2B)h = 64h
00h
(P+33)h = 6Ch
00h
Number of program or erase operations allowed in other banks
while a bank in this region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2C)h = 65h
00h
(P+34)h = 6Dh
00h
Number of program or erase operations allowed in other banks
while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2D)h = 66h
02h
(P+35)h = 6Eh
01h
Types of erase block regions in Bank Region 2
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region.
(2)
(P+2E)h = 67h
06h
(P+36)h = 6Fh
07h
Bank Region 2 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+2F)h = 68h
00h
(P+37)h = 70h
00h
(P+30)h = 69h
00h
(P+38)h = 71h
00h
(P+31)h = 6Ah
01h
(P+39)h = 72h
01h
(P+32)h = 6Bh
64h
(P+3A)h = 73h
64h
Bank Region 2 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+33)h = 6Ch
00h
(P+3B)h = 74h
00h
(P+34)h = 6Dh
01h
(P+3C)h = 75h
01h
Bank Region 2 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
M58WR032FT (top)
M58WR032FB(bottom)
Description
Offset
Data
Offset
Data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58WR032FB60ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB60ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6 | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6E | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR032FB60ZB6F | 功能描述:閃存 32MB 1.8V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR032FB60ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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