參數(shù)資料
型號： M58WR064EBZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 20/82頁
文件大?。?/td> 1100K
代理商： M58WR064EBZB
27/82
Table 9. Configuration Register
Bit
Description
Value
Description
CR15
Read Select
0
Synchronous Read
1
Asynchronous Read (Default at power-on)
CR14
Reserved
CR13-CR11
X-Latency
010
2 clock latency
011
3 clock latency
100
4 clock latency
101
5 clock latency
111
Reserved (default)
Other configurations reserved
CR10
Wait Polarity
0
WAIT is active Low
1
WAIT is active high (default)
CR9
Data Output
Configuration
0
Data held for one clock cycle
1
Data held for two clock cycles (default)
CR8
Wait Configuration
0
WAIT is active during wait state
1
WAIT is active one data cycle before wait state (default)
CR7
Burst Type
0
Interleaved
1
Sequential (default)
CR6
Valid Clock Edge
0
Falling Clock edge
1
Rising Clock edge (default)
CR5-CR4
Reserved
CR3
Wrap Burst
0
Wrap
1
No Wrap (default)
CR2-CR0
Burst Length
001
4 words
010
8 words
111
Continuous (CR7 must be set to ‘1’) (default)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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