參數(shù)資料
型號(hào)： M58WR064EBZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 31/82頁
文件大?。?/td> 1100K
代理商： M58WR064EBZB
37/82
Table 18. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. VDD Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQ
±1
A
IDD1
Supply Current
Asynchronous Read (f=6MHz)
E = VIL, G = VIH
36
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
6
13
mA
8 Word
8
14
mA
Continuous
6
10
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
7
16
mA
8 Word
10
18
mA
Continuous
13
25
mA
IDD2
Supply Current
(Reset)
RP = VSS ± 0.2V
10
50
A
IDD3
Supply Current (Standby)
E = VDD ± 0.2V
10
50
A
IDD4
Supply Current (Automatic
Standby)
E = VIL, G = VIH
10
50
A
IDD5
(1)
Supply Current (Program)
VPP = VPPH
815
mA
VPP = VDD
10
20
mA
Supply Current (Erase)
VPP = VPPH
815
mA
VPP = VDD
10
20
mA
IDD6
(1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
13
26
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
16
30
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDD ± 0.2V
10
50
A
IPP1
(1)
VPP Supply Current (Program)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
A
VPP Supply Current (Erase)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
A
IPP2
VPP Supply Current (Read)
VPP ≤ VDD
0.2
5
A
IPP3
(1)
VPP Supply Current (Standby)
VPP ≤ VDD
0.2
5
A
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