參數(shù)資料
型號： M58WR064EBZB
廠商： 意法半導體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 70/82頁
文件大?。?/td> 1100K
代理商： M58WR064EBZB
72/82
Figure 28. Protection Register Program Flowchart and Pseudo Code
Note: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
3. Any address within the bank can equally be used.
Write C0h (3)
AI06177b
Start
Write Address
& Data
Read Status
Register (3)
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
protection_register_program_command (addressToProgram, dataToProgram) {:
writeToFlash (addressToProgram, 0xC0) ;
/*see note (3) */
do {
status_register=readFlash (addressToProgram) ;
/* see note (3) */
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
}
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