參數(shù)資料
型號： M58WR064EBZB
廠商： 意法半導體
英文描述： 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，多銀行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 9/82頁
文件大?。?/td> 1100K
代理商： M58WR064EBZB
17/82
Table 6. Electronic Signature Codes
Note: CR=Configuration Register.
Figure 5. Security Block and Protection Register Memory Map
Code
Address (h)
Data (h)
Manufacturer Code
Bank Address + 00
0020
Device Code
Top
Bank Address + 01
8810
Bottom
Bank Address + 01
8811
Block Protection
Lock
Block Address + 02
0001
Unlocked
0000
Locked and Locked-Down
0003
Unlocked and Locked-Down
0002
Reserved
Bank Address + 03
Reserved
Configuration Register
Bank Address + 05
CR
Protection Register Lock
ST Factory Default
Bank Address + 80
0006
Security Block Permanently Locked
0002
OTP Area Permanently Locked
0004
Security Block and OTP Area Permanently
Locked
0000
Protection Register
Bank Address + 81
Bank Address + 84
Unique Device
Number
Bank Address + 85
Bank Address + 8C
OTP Area
AI06181
Parameter Block # 0
User Programmable OTP
Unique device number
Protection Register Lock
2
1
0
8Ch
85h
84h
81h
80h
PROTECTION REGISTER
SECURITY BLOCK
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