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參數(shù)資料
| 型號： | M69AW048B |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| 中文描述： | 32兆位（200萬× 16）3V的異步移動存儲芯片 |
| 文件頁數(shù)： | 12/29頁 |
| 文件大小： | 433K |
| 代理商： | M69AW048B |
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M69AW048B
12/29
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in
Table 8., Operating and
AC Measurement Conditions
. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 8. Operating and AC Measurement Conditions
Note: 1. All voltages are referenced to V
SS
.
2. The Input Transition Time used in AC measurements is 5ns. For other input transition times, see Table 8.
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
Parameter
M69AW048B
Unit
70
Min
Max
V
CC
Supply Voltage
1
2.7
3.3
V
Ambient Operating Temperature
–30
85
°C
Load Capacitance (C
L
)
50
pF
Output Circuit Protection Resistance (R
1
)
50
Input Pulse Voltages
0
V
CC
V
Input and Output Timing Ref. Voltages
V
CC
/2
V
Output Transition Timing Ref. Voltages
V
RL
= 0.3V
CC
; V
RH
= 0.7V
CC
V
Input Transition Time
2
(t
τ
) between V
IL
and
V
IH
5
ns
AI04831
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
Output Timing Reference Voltage
0V
0.7VCC
0.3VCC
AI07222c
VCC/2
OUT
CL includes JIG capacitance
DEVICE
UNDER
TEST
CL
R1
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| M69KB096AA85AW8 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM |
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