參數(shù)資料
型號(hào): M69AW048B
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (2M x16) 3V Asynchronous PSRAM
中文描述: 32兆位(200萬× 16)3V的異步移動(dòng)存儲(chǔ)芯片
文件頁數(shù): 6/29頁
文件大?。?/td> 433K
代理商: M69AW048B
M69AW048B
6/29
SIGNAL DESCRIPTIONS
See
Figure 2., Logic Diagram
, and
Table
1., Signal Names
, for a brief overview of the sig-
nals connected to this device.
Address Inputs (A0-A20).
The Address Inputs
select the cells in the memory array to access dur-
ing Read and Write operations.
Data Inputs/Outputs (DQ8-DQ15).
The
Byte Data Inputs/Outputs carry the data to or from
the upper part of the selected address during a
Write or Read operation, when Upper Byte Enable
(UB) is driven Low.
Data Inputs/Outputs (DQ0-DQ7).
The
Byte Data Inputs/Outputs carry the data to or from
the lower part of the selected address during a
Write or Read operation, when Lower Byte Enable
(LB) is driven Low.
Chip Enable (E1).
When asserted (Low), the
Chip Enable, E1, activates the memory state ma-
chine, address buffers and decoders, allowing
Read and Write operations to be performed. When
de-asserted (High), all other pins are ignored, and
the device is put, automatically, in low-power
Standby mode.
Chip Enable (E2).
The Chip Enable, E2, puts the
device in Power-down mode (Deep Power-Down,
PAR and Standby) when it is driven Low. One of
Upper
Lower
these, Deep Power-Down mode, is the lowest
power mode.
Output Enable (G).
The Output Enable, G, pro-
vides a high speed tri-state control, allowing fast
read/write cycles to be achieved with the common
I/O data bus.
Write Enable (W).
The Write Enable, W, controls
the Bus Write operation of the memory’s Com-
mand Interface.
Upper Byte Enable (UB).
The Upper Byte En-
able, UB, gates the data on the Upper Byte Data
Inputs/Outputs (DQ8-DQ15) to or from the upper
part of the selected address during a Write or
Read operation.
Lower Byte Enable (LB).
The Lower Byte En-
able, LB, gates the data on the Lower Byte Data
Inputs/Outputs (DQ0-DQ7) to or from the lower
part of the selected address during a Write or
Read operation.
V
CC
Supply Voltage.
The V
CC
Supply Voltage
supplies the power for all operations (Read, Write,
etc.) and for driving the refresh logic, even when
the device is not being accessed.
V
SS
Ground.
The V
SS
Ground is the reference for
all voltage measurements.
相關(guān)PDF資料
PDF描述
M69AW048BL70ZB8 32 Mbit (2M x16) 3V Asynchronous PSRAM
M6D-50 DOUBLE-BALANCED MIXER
M6MGB331S4BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGB331S8AKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGB331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M69AW048BL70ZB8 制造商:STMicroelectronics 功能描述:
M69AW048BL70ZB8T 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 32 MBIT (2M X16) 3V Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
M69KB096AA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM
M69KB096AA70CW8 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM
M69KB096AA85AW8 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM