參數(shù)資料
型號: M69AW048B
廠商: 意法半導體
英文描述: 32 Mbit (2M x16) 3V Asynchronous PSRAM
中文描述: 32兆位(200萬× 16)3V的異步移動存儲芯片
文件頁數(shù): 20/29頁
文件大?。?/td> 433K
代理商: M69AW048B
M69AW048B
20/29
Figure 14. Write Enable and UB/LB Controlled, Write AC Waveforms 1
Note: E2 = High.
Figure 15. Write Enable and UB/LB Controlled, Write AC Waveforms 2
Note: E2 = High.
A0-A20
ADDRESS VALID
ADDRESS VALID
Low
tAXAV
tAVAX
tAVAX
tAVWL
tWLBH
tBHAX
tAVWL
tBHAX
E1
W
VALID DATA
INPUT
VALID DATA
INPUT
tWLBH
DQ0-DQ7
DQ8-DQ15
LB
UB
tDVBH
tBHDZ
tDVBH
tBHDZ
AI08995b
A0-A20
ADDRESS VALID
ADDRESS VALID
Low
tAVAX
tAVAX
tAVBL
tBLWH
tWHAX
tAVBL
tWHAX
E1
W
VALID DATA
INPUT
VALID DATA
INPUT
tBLWH
DQ0-DQ7
DQ8-DQ15
LB
UB
tDVWH
tWHDZ
tDVWH
tWHDZ
AI08996b
tAXAV
tAXAV
相關PDF資料
PDF描述
M69AW048BL70ZB8 32 Mbit (2M x16) 3V Asynchronous PSRAM
M6D-50 DOUBLE-BALANCED MIXER
M6MGB331S4BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGB331S8AKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGB331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
相關代理商/技術參數(shù)
參數(shù)描述
M69AW048BL70ZB8 制造商:STMicroelectronics 功能描述:
M69AW048BL70ZB8T 功能描述:靜態(tài)隨機存取存儲器 32 MBIT (2M X16) 3V Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
M69KB096AA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM
M69KB096AA70CW8 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM
M69KB096AA85AW8 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM