參數(shù)資料
型號(hào): MB81V18165A-70L
廠商: Fujitsu Limited
英文描述: CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16位超級(jí)頁面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 100萬× 16位的超頁模式動(dòng)態(tài)RAM的CMOS(100萬× 16位超級(jí)頁面存取模式動(dòng)態(tài)內(nèi)存)
文件頁數(shù): 13/30頁
文件大?。?/td> 681K
代理商: MB81V18165A-70L
13
MB81V18165A-60/60L/-70/70L
Fig. 5 – READ CYCLE
DESCRIPTION
To implement a read operation, a valid address is latched by the RAS and LCAS or UCAS address strobes and with WE set to a
High level and OE set to a Low level, the output is valid once the memory access time has elapsed. DQ pins are valid when RAS
and CAS are High or until OE goes High. The access time is determined by RAS (t
RAC
), LCAS/UCAS (t
CAC
), OE (t
OEA
) or column
addresses (t
AA
) under the following conditions:
If t
RCD
> t
RCD
(max), access time = t
CAC
.
If t
RAD
> t
RAD
(max), access time = t
AA
.
If OE is brought Low after t
RAC
, t
CAC
, or t
AA
(whichever occurs later), access time = t
OEA
.
However, if either LCAS/UCAS or OE goes High, the output returns to a high-impedance state after t
OH
is satisfied.
RAS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
LCAS
or
UCAS
WE
DQ
(Output)
A
0
to A
9
V
IH
V
IL
DQ
(Input)
V
IH
V
IL
OE
t
RC
t
RAS
t
AR
t
RP
t
CDD
t
RCD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
OEL
t
COL
t
RCH
t
RRH
t
RCS
t
DZC
t
DZO
t
ON
t
OED
t
OH
t
OFF
t
RAD
ROW ADD
COLUMN ADD
t
RAL
t
CAL
t
AA
t
CAC
t
RAC
HIGH-Z
HIGH-Z
t
OH
t
CSH
t
RSH
t
CAS
t
ON
t
RDD
t
WPZ
t
WED
t
WEZ
t
OEA
t
OEZ
Valid Data
“H” or “L” level (excluding Address and DQ)
“H” or “L” level, “H”
“L” or “L”
“H” transition (Address and DQ)
相關(guān)PDF資料
PDF描述
MB81V18165B-50 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級(jí)頁面存取模式動(dòng)態(tài)RAM)
MB81V18165B-60 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級(jí)頁面存取模式動(dòng)態(tài)RAM)
MB81V4100C-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁面存取模式動(dòng)態(tài)RAM)
MB81V4100C-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁面存取模式動(dòng)態(tài)RAM)
MB81V4260S-60 CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速頁面存取模式動(dòng)態(tài)RAM)
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