參數(shù)資料
型號: MBM29DL64DF70TN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
中文描述: 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 22/68頁
文件大?。?/td> 854K
代理商: MBM29DL64DF70TN
MBM29DL64DF
-70
22
(Continued)
Description
A
6
to A
0
35h
36h
37h
38h
40h
41h
42h
43h
44h
DQ
15
to DQ
0
0007h
0000h
0020h
0000h
0050h
0052h
0049h
0031h
0033h
Erase Block Region 3 Information
bit 15 to bit 0 : y
=
number of sectors
bit 31 to bit 16 : z
=
size
(z
×
256 bytes)
Query-unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
Address for command write and process technology
DQ
1
, DQ
0
: Address requied for command write (00h : requied)
04h : Required and 0.17
μ
m technology
DQ
7
to DQ
2
: 0.17
μ
m process technology
Erase Suspend
02h
=
To Read & Write
Sector Protection
00h
=
Not Supported
X
=
Number of sectors per group
Sector Temporary Unprotection
01h
=
Supported
Sector Protection Algorithm
Dual Operation
00h
=
Not Supported
X
=
Total number of sectors in all banks except Bank 1
Burst Mode Type
00h
=
Not Supported
Page Mode Type
00h
=
Not Supported
V
ACC
(Acceleration) Supply Minimum
DQ
7
to DQ
4
: 1 V, DQ
3
to DQ
0
: 100 mV
V
ACC
(Acceleration) Supply Maximum
DQ
7
to DQ
4
: 1 V, DQ
3
to DQ
0
: 100 mV
Boot Type
Program Suspend
01h
=
Supported
Bank Organization
X
=
Number of Banks
Bank A Region Information
X
=
Number of sectors in Bank A
Bank B Region Information
X
=
Number of sectors in Bank B
Bank C Region Information
X
=
Number of sectors in Bank C
Bank D Region Information
X
=
Number of sectors in Bank D
45h
0004h
46h
0002h
47h
0001h
48h
0001h
49h
0004h
4Ah
0077h
4Bh
0000h
4Ch
0000h
4Dh
0085h
4Eh
0095h
4Fh
0001h
50h
0001h
57h
0004h
58h
0017h
59h
0030h
5Ah
0030h
5Bh
0017h
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