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參數(shù)資料
| 型號： | MBM29DL64DF70TN |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| 中文描述： | 4M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 32/68頁 |
| 文件大?。?/td> | 854K |
| 代理商： | MBM29DL64DF70TN |
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MBM29DL64DF
-70
32
protection command (60h) should be written. A sector group is typically protected in 250
μ
s. To verify program-
ming of the protection circuitry, the sector group addresses pins (A
21
, A
20
, A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
and A
12
)
and (A
6
, A
3
, A
2
, A
1
, A
0
)
=
(0, 0, 0, 1, 0) should be set a command (40h) should be written. Following the command
write, a logic “1” at device output DQ
0
will produce a protected sector in the read operation. If the output is logic
“0”, write the extended sector group protection command (60h) again. To terminate the operation, it is necessary
to set RESET pin to V
IH
. (refer to “(17) Extended Sector Group Protection Timing Diagram” in
I
TIMING DIAGRAM
and “(7) Extended Sector Group Protection Algorithm” in
I
FLOW CHART.)
Query (CFI : Common Flash Memory Interface)
The CFI (Common Flash Memory Interface) specification outlines device and the host system software interro-
gation handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. This allows device-independent, JEDEC ID-independent and forward-and backward-compatible soft-
ware support for the specified flash device families. Refer to Common Flash Memory Interface Code in detail.
The operation is initiated by writing the query command (98h) into the command register. The bank address
should be set when writing this command. Then the device information can be read from the bank, and data
from the memory cell can be read from the another bank. The higher order address (A
21
, A
20
, A
19
) required for
reading out the CFI Codes demands that the bank address (BA) be set at the write cycle. Following the command
write, a read cycle from specific address retrieves device information. Note that output data of upper byte
(DQ
15
to DQ
8
) is “0” in word mode (16 bit) read. Refer to Common Flash Memory Interface Code. To terminate
operation, write the read/reset command sequence into the register.
HiddenROM
Region
The HiddenROM feature provides Flash memory region that the system may access through a new command
sequence. This is primarily intended for customers who wish to use an Electronic Serial Number (ESN) in the
device with the ESN protected against modification. Once the HiddenROM region is protected, any further
modification of that region becomes impossible. This ensures the security of the ESN once the product is shipped
to be sold.
The HiddenROM region is 256 bytes in length and is stored at the same address of SA0 in Bank A. The device
occupies the address of the byte mode 000000h to 0000FFh (word mode 000000h to 00007Fh) . After the system
writes the Enter HiddenROM command sequence, the system reads the HiddenROM region by using the
addresses normally occupied by the boot sector (particular area of SA0) . That is, the device sends all commands
that would normally be sent to the boot sector (particular area of SA0) to the HiddenROM region. This mode of
operation continues until the system issues the Exit HiddenROM command sequence, or until power is removed
from the device. On power-up, or following a hardware reset, the device reverts to sending commands to the
boot sector.
When reading the HiddenROM region, either change addresses or change CE pin from “H” to “L”. The same
procedure should be taken (changing addresses or CE pin from “H” to “L”) after the system issues the Exit
HiddenROM command sequence to read actual memory cell data.
HiddenROM
Entry Command
The device has a HiddenROM area with One Time Protect function. This area is to enter the security code and
to remain once set. Programming is allowed in this area until it is protected. However once protection goes on,
unprotecting it is not allowed. Therefore extreme caution is required.
The HiddenROM area is 256 bytes. This area is normally the “outermost” 8 Kbyte boot block area in Bank A.
Therefore write the HiddenROM entry command sequence to enter the HiddenROM area. It is called HiddenROM
mode when the HiddenROM area appears.
Sectors other than the boot block area SA0 can be read during HiddenROM mode. Read/Program of the
HiddenROM area is possible during HiddenROM mode. Write the HiddenROM reset command sequence to exit
the HiddenROM mode. The bank address of the HiddenROM should be set on the third cycle of this reset
command sequence.
In HiddenROM mode, the simultaneous operation cannot be executed multi-function mode between the Hid-
denROM area and the Bank A.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL800TA | 8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000ucd; Viewing Angle:16 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MBM29DL800BA-90 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Yellow; Luminous Intensity:2500ucd; Viewing Angle:15 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-40 C to +85 C; Color:Yellow; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MBM29DL800TA-12 | 122 x 32 pixel format, LED or EL Backlight available |
| MBM29DL800BA | 8M (1M X 8/512K X 16) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL800BA | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT |
| MBM29DL800BA-70PBT-SF2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT |
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