參數(shù)資料
型號: MBM29DL64DF70TN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
中文描述: 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 42/68頁
文件大小: 854K
代理商: MBM29DL64DF70TN
MBM29DL64DF
-70
42
Write/Erase/Program Operations
(Continued)
Parameter
Symbol
Value
Unit
JEDEC
Standard
Min
Typ
Max
Write Cycle Time
t
AVAV
t
WC
70
ns
Address Setup Time
t
AVWL
t
AS
0
ns
Address Setup Time to OE Low During Toggle Bit
Polling
t
ASO
12
ns
Address Hold Time
t
WLAX
t
AH
30
ns
Address Hold Time from CE or OE High During
Toggle Bit Polling
t
AHT
0
ns
Data Setup Time
t
DVWH
t
DS
25
4
ns
Data Hold Time
t
WHDX
t
DH
0
ns
Output Enable
Hold Time
Read
t
OEH
0
ns
Toggle and Data Polling
10
ns
CE High During Toggle Bit Polling
t
CEPH
20
ns
OE High During Toggle Bit Polling
t
OEPH
20
ns
Read Recover Time Before Write
t
GHWL
t
GHWL
0
ns
Read Recover Time Before Write
t
GHEL
t
GHEL
0
ns
CE Setup Time
t
ELWL
t
CS
0
ns
WE Setup Time
t
WLEL
t
WS
0
ns
CE Hold Time
t
WHEH
t
CH
0
ns
WE Hold Time
t
EHWH
t
WH
0
ns
Write Pulse Width
t
WLWH
t
WP
35
ns
CE Pulse Width
t
ELEH
t
CP
35
ns
Write Pulse Width High
t
WHWL
t
WPH
20
ns
CE Pulse Width High
t
EHEL
t
CPH
20
50
ns
μ
s
μ
s
s
μ
s
ns
Programming Operation
Byte
t
WHWH1
t
WHWH1
Word
6
Sector Erase Operation *
1
t
WHWH2
t
WHWH2
0.5
V
CC
Setup Time
t
VCS
Rise Time to V
ID
*
2
t
VIDR
500
Rise Time to V
ACC
*
3
t
VACCR
500
ns
μ
s
μ
s
Voltage Transition Time *
2
t
VLHT
4
Write Pulse Width *
2
t
WPP
100
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