參數(shù)資料
型號: MBM29F002ST
廠商: Fujitsu Limited
英文描述: 2M (256K ×8) Bit Flash Memory( 單5V 電源電壓256K ×8位閃速存儲器)
中文描述: 200萬(256K × 8)位快閃記憶體(單5V的電源電壓256K × 8位閃速存儲器)
文件頁數(shù): 45/52頁
文件大?。?/td> 591K
代理商: MBM29F002ST
45
MBM29F002T/002B/002ST/002SB
-70/-90/-12
I
ERASE AND PROGRAMMING PERFORMANCE
I
32-PIN TSOP PIN CAPACITANCE (MBM29F002T/002B)
Note:
Test conditions T
A
= 25
°
C, f = 1.0 MHz
I
40-PIN TSOP PIN CAPACITANCE (MBM29F002ST/002SB)
Note:
Test conditions T
A
= 25
°
C, f = 1.0 MHz
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
1
15
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
8
500
μ
s
Excludes system-level overhead
Chip Programming Time
2.1
13
sec
Excludes system-level overhead
Erase/Program Cycle
100,000
Cycles
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
7
8
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8
10
pF
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
8
9
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8.5
11.5
pF
相關(guān)PDF資料
PDF描述
MBM29F002T 2M (256K ×8) Bit Flash Memory( 單5V 電源電壓256K ×8位閃速存儲器)
MBM29F016-12 CMOS 16M (2M x 8) Bit Flash Memory(CMOS 16M (2M x 8)位閃速存儲器)
MBM29F016-90 CMOS 16M (2M x 8) Bit Flash Memory(CMOS 16M (2M x 8)位閃速存儲器)
MBM29F016A 16M (2M X 8) BIT
MBM29F016A-12 1.65A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F002T-90PD# 制造商:FUJITSU 功能描述:
MBM29F002TC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8) BIT
MBM29F002TC-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8) BIT
MBM29F002TC-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8) BIT
MBM29F002TC-90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8) BIT