參數(shù)資料
型號(hào): MBM29F016-90
廠商: Fujitsu Limited
英文描述: CMOS 16M (2M x 8) Bit Flash Memory(CMOS 16M (2M x 8)位閃速存儲(chǔ)器)
中文描述: 的CMOS 1,600(2米× 8)位閃存(1,600的CMOS(200萬(wàn)× 8)位閃速存儲(chǔ)器)
文件頁(yè)數(shù): 41/46頁(yè)
文件大?。?/td> 520K
代理商: MBM29F016-90
41
MBM29F016
-90/-12
I
TYPICAL CHARACTERISTICS CURVES
V
CC
SUPPLY VOLTAGE (V)
4.5
5.5
5.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
C
,
V
CC
SUPPLY VOLTAGE
(V)
“H” LEVEL OUTPUT CURRENT vs.
“H” LEVEL OUTPUT VOLTAGE
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I
C
,
f FREQUENCY (MHz)
10
0.1
1
READ POWER SUPPLY CURRENT
(I
CC1
) vs. SUPPLY VOLTAGE
READ POWER SUPPLY CURRENT vs. FREQUENCY
45
40
35
30
25
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1
V
OL
“L” LEVEL OUTPUT VOLTAGE (V)
t
ACC
vs. LOAD CAPACITANCE (C
L
)
I
O
“L” LEVEL OUTPUT CURRENT vs.
“L” LEVEL OUTPUT VOLTAGE
–45
–40
–35
–30
–25
–20
–15
–10
–5
0
0
1
2
3
4
5
V
OH
“H” LEVEL OUTPUT VOLTAGE (V)
t
ACC
vs. SUPPLY VOLTAGE (V
CC
)
I
O
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
t
A
,
V
CC
= 5.0 V
T
A
= +25
°
C
V
CC
= 5.0 V
T
A
= +25
°
C
V
CC
= 5.0 V
T
A
= +25
°
C
V
IN
= V
CC
/GND
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
C
L
LOAD CAPACITANCE (pF)
t
A
,
0
20
40
60
80
100
120
T
A
= +25
°
C
V
CC
= 5.0 V
T
A
= +25
°
C
4.5
T
A
= +25
°
C
f = 6.0 MHz
5.5
5.0
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MBM29F016A 16M (2M X 8) BIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F016A 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT
MBM29F016A-12 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT
MBM29F016A-12PFTN 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
MBM29F016A-12PFTN-X# 制造商:FUJITSU 功能描述:
MBM29F016A-12PFTR 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT