參數(shù)資料
型號: MBM29F016-90
廠商: Fujitsu Limited
英文描述: CMOS 16M (2M x 8) Bit Flash Memory(CMOS 16M (2M x 8)位閃速存儲器)
中文描述: 的CMOS 1,600(2米× 8)位閃存(1,600的CMOS(200萬× 8)位閃速存儲器)
文件頁數(shù): 7/46頁
文件大?。?/td> 520K
代理商: MBM29F016-90
7
MBM29F016
-90/-12
I
LOGIC SYMBOL
Legend: L = V
IL
, H = V
IH
, X = V
IL
or V
IH
,
= Pulse Input. See DC Characteristics for voltage levels.
Notes: 1.Manufacturer and device codes may also be accessed via a command register write sequence. Refer to
Tables 6.
2.Refer to the section on Sector Group Protection.
3.WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
Table 1 MBM29F016 Pin Configuration
Pin
Function
A
0
to A
20
Address Inputs
DQ
0
to DQ
7
Data Inputs/Outputs
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RY/BY
Ready-Busy Output
RESET
Hardware Reset Pin/Sector Protection
Unlock
N.C.
No Internal Connection
V
SS
Device Ground
V
CC
Device Power Supply
(5.0 V
±
10%)
Table 2 MBM29F016 User Bus Operations
Operation
CE
OE
WE
A
0
A
1
A
6
A
9
DQ
0
to DQ
7
RESET
Auto-Select Manufacturer Code (1)
L
L
H
L
L
L
V
ID
Code
H
Auto-Select Device Code (1)
L
L
H
H
L
L
V
ID
Code
H
Read (3)
L
L
H
A
0
A
1
A
6
A
9
D
OUT
H
Standby
H
X
X
X
X
X
X
High-Z
H
Output Disable
L
H
H
X
X
X
X
High-Z
H
Write
L
H
L
A
0
A
1
A
6
A
9
D
IN
H
Enable Sector Group Protection (2)
L
V
ID
X
X
X
V
ID
X
H
Verify Sector Group Protection (2)
L
L
H
L
H
L
V
ID
Code
H
Temporary Sector Group Unprotection
X
X
X
X
X
X
X
X
V
ID
Reset (Hardware)
X
X
X
X
X
X
X
High-Z
L
21
A
0
to A
20
WE
OE
CE
DQ
0
to DQ
7
8
RESET
RY/BY
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