參數(shù)資料
型號(hào): MBM29F016A-12PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 16M (2M X 8) BIT
中文描述: 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁(yè)數(shù): 12/43頁(yè)
文件大?。?/td> 458K
代理商: MBM29F016A-12PFTN
12
MBM29F016A
-70/-90/-12
Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the MBM29F016A device
in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to high
voltage (12 V). During this mode, formerly protected sector groups can be programmed or erased by selecting
the sector group addresses. Once the 12 V is taken away from the RESET pin, all the previously protected sector
groups will be protected again. Refer to Figures 14 and 21.
Notes:
1.Address bits A
11
to A
20
= X = “H” or “L” for all address commands except or Program Address (PA) and
Sector Address (SA).
2.Bus operations are defined in Table 2.
3.RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of
the WE pulse.
SA = Address of the sector to be erased. The combination of A
20
, A
19
, A
18
, A
17
, and A
16
will uniquely select
any sector.
4.RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
5.Read and Byte program functions to non-erasing sectors are allowed in the Erase Suspend mode.
6.The system should generate the following address pattens: 555H or 2AAH to addresses A
0
to A
10
.
*: Either of the two reset commands will reset the device.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the device to the
read mode. Table 6 defines the valid register command sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover, both
Read/Reset commands are functionally equivalent, resetting the device to the read mode.
Table 6 MBM29F016A Command Definitions
Command
Sequence
Bus
Write
Cycles
Req'd
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
Read/Reset*
1
XXXH F0H
Reset/Read*
3
555H
AAH
2AAH
55H
555H
F0H
RA
RD
Autoselect
3
555H
AAH
2AAH
55H
555H
90H
Byte Program
4
555H
AAH
2AAH
55H
555H
A0H
PA
PD
Chip Erase
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
555H
10H
Sector Erase
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
SA
30H
Sector Erase Suspend
Erase can be suspended during sector erase with Addr (“H” or “L”), Data (B0H)
Sector Erase Resume
Erase can be resumed after suspend with Addr (“H” or “L”), Data (30H)
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