參數(shù)資料
型號: MBM29F016A-12PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 16M (2M X 8) BIT
中文描述: 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 15/43頁
文件大?。?/td> 458K
代理商: MBM29F016A-12PFTN
15
MBM29F016A
-70/-90/-12
the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase
operation.
Any other command written during the Erase Suspend mode will be ignored except the Erase Resume command.
Writing the Erase Resume command resumes the erase operation. The addresses are DON’T CARES when
writing the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of 15
μ
s to suspend the erase operation. When the device has entered the erase-suspended mode, the RY/BY
output pin and the DQ
7
bit will be at logic “1”, and DQ
6
will stop toggling. The user must use the address of the
erasing sector for reading DQ
6
and DQ
7
to determine if the erase operation has been suspended. Further writes
of the Erase Suspend command are ignored.
When the erase operation has been suspended, the device defaults to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ
2
to toggle. (See the section on DQ
2
.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate
command sequence for Byte Program. This program mode is known as the erase-suspend-program mode.
Again, programming in this mode is the same as programming in the regular Byte Program mode except that
the data must be programmed to sectors that are not erase-suspended. Successively reading from the erase-
suspended sector while the device is in the erase-suspend-program mode will cause DQ
2
to toggle. The end of
the erase-suspended program operation is detected by the RY/BY output pin, Data polling of DQ
7
, or by the
Toggle Bit I (DQ
6
) which is the same as the regular Byte Program operation. Note that DQ
7
must be read from
the Byte Program address while DQ
6
can be read from any address.
To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
相關(guān)PDF資料
PDF描述
MBM29F016A-12PFTR 16M (2M X 8) BIT
MBM29F016A-70PFTN 16M (2M X 8) BIT
MBM29F016A-70PFTR 1.65A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-PDIP -40 to 85
MBM29F016A-90PFTN 16M (2M X 8) BIT
MBM29F016A-90PFTR 2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F016A-12PFTN-X# 制造商:FUJITSU 功能描述:
MBM29F016A-12PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT
MBM29F016A-70 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT
MBM29F016A-70PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT
MBM29F016A-70PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT