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參數(shù)資料
| 型號： | MBM29F080-12 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 8M (1M ×8) BIT Flash Memory(1M ×8 位5V 電源電壓閃速存儲器) |
| 中文描述： | 8米（1米× 8）位快閃記憶體（1米× 8位5V的電源電壓閃速存儲器） |
| 文件頁數(shù)： | 10/50頁 |
| 文件大?。?/td> | 667K |
| 代理商： | MBM29F080-12 |
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10
MBM29F080
-90/-12
Read Mode
The MBM29F080 has two control functions which must be satisfied in order to obtain data at the outputs. CE is
the power control and should be used for a device selection. OE is the output control and should be used to
gate data to the output pins if a device is selected.
Address access time (t
ACC
) is equal to the delay from stable addresses to valid output data. The chip enable
access time (t
CE
) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least t
ACC
-t
OE
time.)
Standby Mode
There are two ways to implement the standby mode on the MBM29F080 device, one using both the CE and
RESET pins; the other via the RESET pin only.
When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V
CC
±
0.3 V.
Under this condition the current consumed is less than 5
μ
A. A TTL standby mode is achieved with CE and
RESET pins held at V
IH
. Under this condition the current is reduced to approximately 1 mA. The device can be
read with standard access time (t
CE
) from either of these standby modes.
When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at V
SS
±
0.3 V (CE
= “H” or “L”). Under this condition the current consumed is less than 5
μ
A. A TTL standby mode is achieved with
RESET pin held at V
IL
(CE = “H” or “L”). Under this condition the current required is reduced to approximately
1 mA. Once the RESET pin is taken high, the device requires 500 ns of wake up time before outputs are valid
for read access.
In the standby mode the outputs are in the high impedance state, independent of the OE input.
Output Disable
With the OE input at a logic high level (V
IH
), output from the device is disabled. This will cause the output pins
to be in a high impedance state.
Autoselect
The Autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the device to be programmed with its corresponding programming algorithm. This mode is functional over the
entire temperature range of the device.
To activate this mode, the programming equipment must force V
ID
(11.5 V to 12.5 V) on address pin A
9
. Two
identifier bytes may then be sequenced from the device outputs by toggling address A
0
from V
IL
to V
IH
. All
addresses are DON'T CARES except A
0
, A
1
, and A
6
. (See Table 3.)
The manufacturer and device codes may also be read via the command register, for instances when the
MBM29F080 is erased or programmed in a system without access to high voltage on the A
9
pin. The command
sequence is illustrated in Table 6. (See Autoselect Command section.)
Byte 0 (A
0
= V
IL
) represents the manufacturer's code (Fujitsu = 04H) and byte 1 (A
0
= V
IH
) the device identifier
code for MBM29F080 = D5H. These two bytes are given in the table 3. All identifiers for manufacturer and device
will exhibit odd parity with DQ
7
defined as the parity bit. In order to read the proper device codes when executing
the Autoselect, A
1
must be V
IL
. (See Table 3.)
The Autoselect mode also facilitates the determination of sector group protection in the system. By performing
a read operation at the address location XX02H with the higher order address bits A
17
, A
18
, and A
19
set to the
desired sector group address, the device will return 01H for a protected sector group and 00H for a non-protected
sector group.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F080-90 | 8M (1M ×8) BIT Flash Memory(1M ×8 位5V 電源電壓閃速存儲器) |
| MBM29F080A-55 | 8M (1M X 8) BIT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F080-90PFTN | 制造商:FUJITSU 功能描述: |
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| MBM29F080A-55 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT |
| MBM29F080A-55PF | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8) BIT |
| MBM29F080A-55PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8) BIT |
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