參數(shù)資料
型號: MBM29F080-12
廠商: Fujitsu Limited
英文描述: 8M (1M ×8) BIT Flash Memory(1M ×8 位5V 電源電壓閃速存儲器)
中文描述: 8米(1米× 8)位快閃記憶體(1米× 8位5V的電源電壓閃速存儲器)
文件頁數(shù): 25/50頁
文件大?。?/td> 667K
代理商: MBM29F080-12
25
MBM29F080
-90/-12
I
AC CHARACTERISTICS
Read Only Operations Characteristics
Note: Test Conditions: Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level
Input: 0.8 V and 2.0 V
Output: 0.8 V and 2.0 V
Parameter
Symbols
Description
Test Setup
–90
(Note)
–12
(Note)
Unit
JEDEC Standard
t
AVAV
t
RC
Read Cycle Time
Min.
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max.
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max.
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max.
40
50
ns
t
EHQZ
t
DF
Chip Enable to Output High-Z
Max.
20
30
ns
t
GHQZ
t
DF
Output Enable to Output High-Z
Max.
20
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE or
OE, Whichever Occurs First
Min.
0
0
ns
t
READY
RESET Pin Low to Read Mode
Max.
20
20
μ
s
Figure 4 Test Conditions
Note: C
L
= 100 pF including jig capacitance
C
L
5.0 V
Diodes = IN3064
or Equivalent
2.7 k
Device
Under
Test
IN3064
or Equivalent
6.2 k
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