- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377944 > MBM29F080 (Fujitsu Limited) CMOS 8M (1M ×8) Bit Flash Memory( 單5V 電源電壓1M ×8位閃速存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | MBM29F080 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 8M (1M ×8) Bit Flash Memory( 單5V 電源電壓1M ×8位閃速存儲(chǔ)器) |
| 中文描述： | 800萬(wàn)的CMOS（100萬(wàn)× 8）位快閃記憶體（單5V的電源電壓100萬(wàn)× 8位閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/22頁(yè) |
| 文件大?。?/td> | 323K |
| 代理商： | MBM29F080 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)
Embedded Erase, Embedded Program and ExpressFlash are trademarks of Advanced Micro Devices, Inc.
DS05-20821-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8M (1M
×
8) BIT
MBM29F080
-12-X
I
FEATURES
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standards
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
Compatible with JEDEC-standard pinouts
48-pin TSOP (Package suffix: PFTN–Normal Bend Type, PFTR–Reversed)
40-pin TSOP (Package suffix: PTN–Normal Bend Type, PTR–Reversed Bend Type)
44-pin SOP (Package suffix: PF)
Minimum 100,000 write/erase cycles
High performance
120 ns maximum access time
Sector erase architecture
Uniform sectors of 64K bytes each
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Embedded Erase
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/BUSY output (RY/BY)
Hardware method for detection of program or erase cycle completion
Low V
CC
write inhibit
≤
3.2 V
Hardware RESET pin
Resets internal state machine to the read mode
Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 2 adjacent sectors of 64K bytes each)
TM
TM
(Continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F160BE-55PFTN | 16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-55PFTR | 16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-55TN | 16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-55TR | 16M (2M X 8/1M X 16) BIT |
| MBM29F160BE-70PFTN | 16M (2M X 8/1M X 16) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F080-90PFTN | 制造商:FUJITSU 功能描述: |
| MBM29F080A | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8) BIT |
| MBM29F080A-55 | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT |
| MBM29F080A-55PF | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8) BIT |
| MBM29F080A-55PFTN | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8) BIT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。
