參數(shù)資料
型號: MBM29F080
廠商: Fujitsu Limited
英文描述: CMOS 8M (1M ×8) Bit Flash Memory( 單5V 電源電壓1M ×8位閃速存儲器)
中文描述: 800萬的CMOS(100萬× 8)位快閃記憶體(單5V的電源電壓100萬× 8位閃速存儲器)
文件頁數(shù): 16/22頁
文件大?。?/td> 323K
代理商: MBM29F080
16
MBM29F080
-12-X
I
ERASE AND PROGRAMMING PERFORMANCE
I
TSOP 48-PIN CAPACITANCE
Note:
Test conditions T
A
= 25
°
C, f = 1.0 MHz
I
TSOP 40-PIN CAPACITANCE
Note:
Test conditions T
A
= 25
°
C, f = 1.0 MHz
I
SOP PIN CAPACITANCE
Note:
Test conditions T
A
= 25
°
C, f = 1.0 MHz
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
1
15
sec
Excludes 00H programming
prior to erasure
Byte Programming Time
8
2,000
μ
s
Excludes system-level
overhead
Chip Programming Time
8
25
sec
Excludes system-level
overhead
Erase/Program Cycle
100,000
Cycles
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
9
10
pF
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
9
10
pF
Parameter
Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0
8
10.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
10
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
9.5
11
pF
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