參數(shù)資料
型號(hào)： MBM29F800B-90
廠商： Fujitsu Limited
英文描述： 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
中文描述： 8米（1米× 8/512K × 6）位Falsh內(nèi)存（單5V的電源電壓100萬(wàn)× 8/512K × 6位閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 12/51頁(yè)
文件大小： 642K
代理商： MBM29F800B-90
12
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
To activate this mode, the programming equipment must force V
ID
on address pin A
9
and control pin OE, (suggest
V
ID
= 11.5V), CE = V
IL
, and A
6
= V
IL
. The sector addresses (A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
) should be set to
the sector to be protected. Tables 5 and 6 define the sector address for each of the nineteen (19) individual
sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated
with the rising edge of the same. Sector addresses must be held constant during the WE pulse. Refer to figures
15 and 22 for sector protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force V
ID
on address pin A
9
with CE and OE at V
IL
and WE at V
IH
. Scanning the sector addresses (A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
) while
(A
6
, A
1
, A
0
) = (0, 1, 0) will produce a logical “1” code at device output DQ
0
for a protected sector. Otherwise the
devices will produce 00H for unprotected sector. In this mode, the lower order addresses, except for A
0
, A
1
, and
A
6
are don't care. Address locations with A
1
= V
IL
are reserved for Autoselect manufacturer and device codes.
A
-1
requires to apply to V
IL
on byte mode.
It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing
a read operation at the address location XX02H, where the higher order addresses (A
18
, A
17
, A
16
, A
15
, A
14
, A
13
,
and A
12
) are the desired sector address will produce a logical “1” at DQ
0
for a protected sector. See Tables 4.1
and 4.2 for Autoselect codes.
Temporary Sector Unprotection
This feature allows temporary unprotection of previously protected sectors of the MBM29F800T/B device in
order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12
V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses.
Once the 12 V is taken away from the RESET pin, all the previously protected sectors will be protected again.
Refer to Figures 16 and 23.
相關(guān)PDF資料
PDF描述
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
MBM29F800TA Replaced by TPS2045A : 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
MBM29F800BA-70 Multi-Color LED; Bulb Size:T-1; LED Color:Red/Green; Luminous Intensity:14ucd; Viewing Angle:60 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-25 C to +75 C; Color:Red/Green RoHS Compliant: Yes
MBM29F800BA-70PF LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:600ucd; Viewing Angle:40 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes
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MBM29F800BA-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
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