參數(shù)資料
型號(hào): MBM29F800B-90
廠商: Fujitsu Limited
英文描述: 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
中文描述: 8米(1米× 8/512K × 6)位Falsh內(nèi)存(單5V的電源電壓100萬(wàn)× 8/512K × 6位閃速存儲(chǔ)器)
文件頁(yè)數(shù): 28/51頁(yè)
文件大小: 642K
代理商: MBM29F800B-90
28
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
Write/Erase/Program Operations
Alternate WE Controlled Writes
Notes:
1. This does not include the preprogramming time.
2. These timing is for Sector Protection operation.
Parameter Symbols
Description
-90
-12
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time
Min.
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min.
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min.
45
50
ns
t
DVWH
t
DS
Data Setup Time
Min.
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min.
0
0
ns
t
OES
Output Enable Setup Time
Min.
0
0
ns
t
OEH
Output
Enable Hold
Time
Read
Min.
0
0
ns
Toggle and Data Polling
Min.
10
10
ns
t
GHWL
t
GHWL
Read Recover Time Before Write
Min.
0
0
ns
t
ELWL
t
CS
CE Setup Time
Min.
0
0
ns
t
WHEH
t
CH
CE Hold Time
Min.
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min.
45
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min.
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ.
8
8
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
Typ.
1
1
sec
Max.
15
15
sec
t
VCS
V
CC
Setup Time
Min.
50
50
μ
s
t
VLHT
Voltage Transition Time (Note 2)
Min.
4
4
μ
s
t
WPP
Write Pulse Width (Note 2)
Min.
100
100
μ
s
t
OESP
OE Setup Time to WE Active (Note 2)
Min.
4
4
μ
s
t
CSP
CE Setup Time to WE Active (Note 2)
Min.
4
4
μ
s
t
RP
RESET Pulse Width
Min.
500
500
ns
t
FLQZ
BYTE Switching Low to Output High-Z
Max.
30
30
ns
t
BUSY
Program/Erase Valid to RY/BY Delay
Min.
35
50
ns
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