參數(shù)資料
型號(hào)： MBM29F800B-90
廠商： Fujitsu Limited
英文描述： 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
中文描述： 8米（1米× 8/512K × 6）位Falsh內(nèi)存（單5V的電源電壓100萬(wàn)× 8/512K × 6位閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 26/51頁(yè)
文件大小： 642K
代理商： MBM29F800B-90
26
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
CMOS Compatible
Notes:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component
(at 6 MHz).
The frequency component typically is 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Applicable to sector protection function.
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.
—
+1.0
μ
A
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.
—
+1.0
μ
A
I
LIT
A
9
, OE, RESET Inputs Leakage
Current
V
CC
= V
CC
Max.
A
9
, OE, RESET = 12.0 V
—
50
μ
A
I
CC1
V
CC
Active Current (Note 1)
CE = V
IL
, OE = V
IH
Byte
—
38
mA
Word
45
I
CC2
V
CC
Active Current (Note 2)
CE = V
IL
, OE = V
IH
—
50
mA
I
CC3
V
CC
Current (Standby)
V
CC
= V
CC
Max., CE = V
CC
±
0.3 V,
RESET = V
CC
±
0.3 V
—
5
μ
A
I
CC4
V
CC
Current (Standby, Reset)
V
CC
= V
CC
Max.,
RESET = V
SS
±
0.3 V
—
5
μ
A
V
IL
Input Low Level
—
–0.5
0.8
V
V
IH
Input High Level
—
0.7
×
V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and
Sector Protection
(A
9
, OE, RESET) (Note 3)
V
CC
= 5.0V
11.5
12.5
V
V
OL
Output Low Voltage Level
I
OL
= 5.8mA, V
CC
= V
CC
Min.
—
0.45
V
V
OH1
Output High Voltage Level
I
OH
= –2.5 mA, V
CC
= V
CC
Min.
0.85
×
V
CC
—
V
V
OH2
I
OH
= –100
μ
A, V
CC
= V
CC
Min.
V
CC
– 0.4
—
V
V
LKO
Low V
CC
Lock-Out Voltage
—
3.2
4.2
V
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