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參數(shù)資料
| 型號： | MBM29F800B-90 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器) |
| 中文描述： | 8米（1米× 8/512K × 6）位Falsh內(nèi)存（單5V的電源電壓100萬× 8/512K × 6位閃速存儲器） |
| 文件頁數(shù)： | 21/51頁 |
| 文件大小： | 642K |
| 代理商： | MBM29F800B-90 |
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21
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
RY/BY
Ready/Busy
The MBM29F800T/B provides a RY/BY open-drain output pin as a way to indicate to the host system that the
Embedded
TM
Algorithms are either in progress or completed. If the output is low, the device is busy with either
a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation.
When the RY/BY pin is low, the device will not accept any additional program or erase commands. If the
MBM29F800T/B is placed in an Erase Suspend mode, the RY/BY output will be high. Also, since this is an open
drain output, many RY/BY pins can be tied together in parallel with a pull up resistor to V
CC
.
During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin will indicate a
busy condition during the RESET pulse. Refer to Figure 11 and 12 for a detailed timing diagram.
Since this is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to V
CC
.
RESET
Hardware Reset
The MBM29F800T/B device may be reset by driving the RESET pin to V
IL
. The RESET pin has a pulse
requirement and has to be kept low (V
IL
) for at least 500 ns in order to properly reset the internal state machine.
Any operation in the process of being executed will be terminated and the internal state machine will be reset
to the read mode 20
μ
s after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the
device requires an additional 50 ns before it will allow read access. When the RESET pin is low, the device will
be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware
reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please
note that the RY/BY output signal should be ignored during the RESET pulse. Refer to Figure 12 for the timing
diagram. Refer to Temporary Sector Unprotection for additional functionality.
If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the erasing sector(s)
cannot be used.
Byte/Word Configuration
The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29F800T/B device. When this pin
is driven high, the device operates in the word (16-bit) mode. The data is read and programmed at DQ
0
to DQ
15
.
When this pin is driven low, the device operates in byte (8-bit) mode. Under this mode, the DQ
15
/A
-1
pin becomes
the lowest address bit and DQ
8
to DQ
14
bits are tri-stated. However, the command bus cycle is always an 8-bit
operation and hence commands are written at DQ
0
to DQ
7
and the DQ
8
to DQ
15
bits are ignored. Refer to Figures
13 and 14 for the timing diagram.
Data Protection
The MBM29F800T/B are designed to offer protection against accidental erasure or programming caused by
spurious system level signals that may exist during power transitions. During power up the device automatically
resets the internal state machine in the read mode. Also, with its control register architecture, alteration of the
memory contents only occurs after successful completion of specific multi-bus cycle command sequences.
The device also incorporate several features to prevent inadvertent write cycles resulting form V
CC
power-up and
power-down transitions or system noise.
Low V
CC
Write Inhibit
To avoid initiation of a write cycle during V
CC
power-up and power-down, a write cycle is locked out for V
CC
less
than 3.2 V (typically 3.7 V). If V
CC
< V
LKO
, the command register is disabled and all internal program/erase circuits
are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until
the V
CC
level is greater than V
LKO
. It is the users responsibility to ensure that the control pins are logically correct
to prevent unintentional writes when V
CC
is above 3.2 V.
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F800B | 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器) |
| MBM29F800T | 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器) |
| MBM29F800TA | Replaced by TPS2045A : 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85 |
| MBM29F800BA-70 | Multi-Color LED; Bulb Size:T-1; LED Color:Red/Green; Luminous Intensity:14ucd; Viewing Angle:60 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-25 C to +75 C; Color:Red/Green RoHS Compliant: Yes |
| MBM29F800BA-70PF | LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:600ucd; Viewing Angle:40 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F800B-90PFTN# | 制造商:FUJITSU 功能描述: |
| MBM29F800BA | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY |
| MBM29F800BA-55 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29F800BA-55PF | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29F800BA-55PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
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