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參數(shù)資料
| 型號(hào)： | MBM29LV002B |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 2M (256K ×8) Flash Memory(CMOS 2M(256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器) |
| 中文描述： | 200萬的CMOS（256K × 8）快閃記憶體（200萬的CMOS（256K × 8）位單5V的電源電壓閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 9/45頁 |
| 文件大?。?/td> | 279K |
| 代理商： | MBM29LV002B |
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9
MBM29LV002T/MBM29LV002B
I
FUNCTIONAL DESCRIPTION
Read Mode
The MBM29LV002T/002B have two control functions which must be satisfied in order to obtain data at the
outputs. CE is the power control and should be used for a device selection. OE is the output control and should
be used to gate data to the output pins if a device is selected.
Address access time (t
access time (t
enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least t
ACC
- t
CE
time.)
ACC
) is equal to the delay from stable addresses to valid output data. The chip enable
) is the delay from stable addresses and stable CE to valid data at the output pins. The output
CE
Standby Mode
There are two ways to implement the standby mode on the MBM29LV002T/002B devices, one using both the
CE and RESET pins; the other via the RESET pin only.
When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V
Under this condition the current consumed is less than 5
RESET pins held at V
IH
. Under this condition the current is reduced to less than 250
with standard access time (t
CE
) from either of these standby modes.
CC
±
0.3 V.
μ
A. A TTL standby mode is achieved with CE and
μ
A. The device can be read
When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at V
= “H” or “L”). Under this condition the current is consumed is less than 5
with RESET pin held at V
IL
(CE= “H” or “L”). Under this condition the current required is reduced to less than
250
μ
A. Once the RESET pin is taken high, the device requires 500 ns of wake up time before outputs are valid
for read access.
SS
±
0.3 V (CE
μ
A. A TTL standby mode is achieved
In the standby mode the outputs are in the high impedance state, independent of the OE input.
Automatic Sleep Mode
There is a function called automatic sleep mode to restrain power consumption during read-out of
MBM29LV002T/002B data.
This mode can be used effectively with an application requested low power consumption such as handy terminals.
To activate this mode, MBM29LV002T/002B automatically switch itself to low power mode when MBM29LV002T/
002B addresses remain stably during access time of 300 ns. It is not necessary to control CE, WE, and OE on
the mode. Under the mode, the current consumed is typically 1
μ
A (CMOS level).
Since the data are latched during this mode, the data are read out continuously. If the addresses are changed,
the mode is canceled automatically and MBM29LV002T/002B read-out the data for changed addresses.
Output Disable
With the OE input at a logic high level (V
to be in a high impedance state.
IH
), output from the device is disabled. This will cause the output pins
Autoselect
The autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the device to be programmed with its corresponding programming algorithm. This mode is functional over the
entire temperature range of the device.
To activate this mode, the programming equipment must force V
identifier bytes may then be sequenced from the device outputs by toggling address A
addresses are DON’T CARES except A
0
, A
1
, A
ID
(11.5 V to 12.5 V) on address pin A
9
. Two
. All
0
from V
IL
to V
IH
6
, and A
10
.
(See Table 3.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29LV002T | CMOS 2M (256K ×8) Flash Memory(CMOS 2M(256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器) |
| MBM29LV003T-12 | 2M (256K ×8) Bit Flash Memory(2M (256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器) |
| MBM29LV002B-10 | 2M (256K ×8) Bit Flash Memory(2M (256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器) |
| MBM29LV002B-12 | 2M (256K ×8) Bit Flash Memory(2M (256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器) |
| MBM29LV002T-10 | 2M (256K ×8) Bit Flash Memory(2M (256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV002BC | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002BC-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002BC-12PNS | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002BC-12PTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002BC-12PTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
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