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參數(shù)資料
| 型號： | MBM29PDS322TE10PBT |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85 |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63 |
| 封裝： | PLASTIC, FBGA-63 |
| 文件頁數(shù)： | 10/66頁 |
| 文件大?。?/td> | 694K |
| 代理商： | MBM29PDS322TE10PBT |
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MBM29PDS322TE/BE
10/11
10
SA = Address of the sector to be erased. The combination of A
20
, A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and
A
12
will uniquely select any sector.
BA = Bank Address (A
20
to A
15
)
4.RD = Data read from location RA during the read operation.
PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
5.SPA = Sector group address to be protected. Set sector group address (SGA) and (A
6
, A
1
, A
0
) = (0, 1, 0).
SD = Sector group protection verify data. Output 01h at protected sector group addresses and output
00h at unprotected sector group addresses.
6.HRA = Address of the Hi-ROM area
29PDS322TE (Top Boot Type)Word Mode:1F8000h to 1FFFFFh
29PDS322BE (Bottom Boot Type)Word Mode:000000h to 007FFFh
7.HRBA =Bank Address of the Hi-ROM area
29PDS322TE (Top Boot Type):A
20
= A
19
= A
18
= A
17
= A
16
= A
15
= 1
29PDS322BE (Bottom Boot Type):A
20
= A
19
= A
18
= A
17
= A
16
= A
15
= 0
8.The system should generate the following address patterns:
Word Mode: 555h or 2AAh to addresses A
10
to A
0
9.Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29PDS322TE10 | 32M (2M x 16) BIT Page Dual Operation |
| MBM29PDS322BE | 32M (2M x 16) BIT Page Dual Operation |
| MBM29PDS322TE | 32M (2M x 16) BIT Page Dual Operation |
| MBM29PDS322TE11 | 32M (2M x 16) BIT Page Dual Operation |
| MBM29PDS322TE11PBT | 32M (2M x 16) BIT Page Dual Operation |
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