參數(shù)資料
型號: MBM29PDS322TE10PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
中文描述: 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
封裝: PLASTIC, FBGA-63
文件頁數(shù): 45/66頁
文件大?。?/td> 694K
代理商: MBM29PDS322TE10PBT
MBM29PDS322TE/BE
10/11
45
t
WS
t
GHEL
t
WH
t
CP
t
WHWH1
t
WC
t
AH
WE
OE
Address
Data
t
CPH
t
DS
t
DH
DQ
7
PD
A0h
D
OUT
CE
555h
PA
PA
t
AS
3rd Bus Cycle
Data Polling
Figure 7 Alternate CE Controlled Program Operation Timing Diagram
Notes: 1.PA is address of the memory location to be programmed.
2.PD is data to be programmed at word address.
3.DQ
7
is the output of the complement of the data written to the device.
4.D
OUT
is the output of the data written to the device.
5.Figure indicates last two bus cycles out of four bus cycle sequence.
相關(guān)PDF資料
PDF描述
MBM29PDS322TE10 32M (2M x 16) BIT Page Dual Operation
MBM29PDS322BE 32M (2M x 16) BIT Page Dual Operation
MBM29PDS322TE 32M (2M x 16) BIT Page Dual Operation
MBM29PDS322TE11 32M (2M x 16) BIT Page Dual Operation
MBM29PDS322TE11PBT 32M (2M x 16) BIT Page Dual Operation
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