參數(shù)資料
型號(hào): MBM29PDS322TE10PBT
廠(chǎng)商: FUJITSU LTD
元件分類(lèi): DRAM
英文描述: Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
中文描述: 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
封裝: PLASTIC, FBGA-63
文件頁(yè)數(shù): 39/66頁(yè)
文件大小: 694K
代理商: MBM29PDS322TE10PBT
MBM29PDS322TE/BE
10/11
39
(Continued)
*1:This does not include the preprogramming time.
*2:This timing is for Sector Group Protection operation.
*3:This timing is for Accelerated Program operation.
Parameter
Symbol
Value
Unit
10
11
JEDEC
Standard Min. Typ. Max. Min. Typ. Max.
CE Setup Time to WE Active *
2
t
CSP
4
4
μs
Recover Time From RY/BY
t
RB
0
0
ns
RESET Pulse Width
t
RP
500
500
ns
RESET High Level Period Before Read
t
RH
200
200
ns
Program/Erase Valid to RY/BY Delay
t
BUSY
90
90
ns
Delay Time from Embedded Output Enable
t
EOE
90
115
ns
Erase Time-out Time
t
TOW
50
50
μs
Erase Suspend Transition Time
t
SPD
20
20
μs
Power On / Off Time
t
PS
100
115
ns
相關(guān)PDF資料
PDF描述
MBM29PDS322TE10 32M (2M x 16) BIT Page Dual Operation
MBM29PDS322BE 32M (2M x 16) BIT Page Dual Operation
MBM29PDS322TE 32M (2M x 16) BIT Page Dual Operation
MBM29PDS322TE11 32M (2M x 16) BIT Page Dual Operation
MBM29PDS322TE11PBT 32M (2M x 16) BIT Page Dual Operation
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