Timer Interface Module Characteristics
MC68HC908GT16 MC68HC908GT8 MC68HC08GT16 Data Sheet, Rev. 5.0
Freescale Semiconductor
273
20.19 Timer Interface Module Characteristics
20.20 Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
Input capture pulse width
t
TIH
, t
TIL
1
—
t
CYC
Characteristic
Symbol
Min
Typ
Max
Unit
RAM data retention voltage
V
RDR
1.3
—
—
V
Flash program bus clock frequency
—
1
—
—
MHz
Flash read bus clock frequency
f
Read(1)
1. f
Read
is defined as the frequency range for which the Flash memory can be read.
2. t
RCV
is defined as the time it needs before the Flash can be read after turning off the high voltage charge pump, by clearing
HVEN to 0.
3. t
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
t
HV
must satisfy this condition: t
NVS
+ t
NVH
+ t
PGS
+ (t
PROG
×
32)
≤
t
HV
maximum.
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines
Typical
Endurance
, please refer to Engineering Bulletin EB619.
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines
Typical Data Retention
, please
refer to Engineering Bulletin EB618.
8k
—
8M
Hz
Flash page erase time
<1 k cycles
>1 k cycles
t
Erase
0.9
3.6
1
4
1.1
5.5
ms
Flash mass erase time
t
MErase
4
—
—
ms
Flash PGM/ERASE to HVEN set up time
t
NVS
10
—
—
μ
s
Flash high-voltage hold time
t
NVH
5
—
—
μ
s
Flash high-voltage hold time (mass erase)
t
NVHL
100
—
—
μ
s
Flash program hold time
t
PGS
5
—
—
μ
s
Flash program time
t
PROG
t
RCV(2)
t
HV(3)
30
—
40
μ
s
Flash return to read time
1
—
—
μ
s
Flash cumulative program HV period
—
—
4
ms
Flash program endurance
(4)
—
10k
100k
—
Cycles
Flash data retention time
(5)
—
15
100
—
Years