
Timer Interface Module Characteristics
MC68HC908GT16 MC68HC908GT8 Data Sheet, Rev. 3
Freescale Semiconductor
271
20.19 Timer Interface Module Characteristics
20.20 Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
Input capture pulse width
t
TIH
, t
TIL
1
—
t
CYC
Characteristic
Symbol
Min
Typ
Max
Unit
RAM data retention voltage
V
RDR
1.3
—
—
V
FLASH program bus clock frequency
—
1
—
—
MHz
FLASH read bus clock frequency
f
Read(1)
1. f
Read
is defined as the frequency range for which the FLASH memory can be read.
2. t
RCV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
HVEN to 0.
3. t
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
t
HV
must satisfy this condition: t
NVS
+ t
NVH
+ t
PGS
+ (t
PROG
×
32)
≤
t
HV
maximum.
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines
Typical
Endurance
, please refer to Engineering Bulletin EB619.
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines
Typical Data Retention
, please
refer to Engineering Bulletin EB618.
8 k
—
8 M
Hz
FLASH page erase time
<1 k cycles
>1 k cycles
t
Erase
0.9
3.6
1
4
1.1
5.5
ms
FLASH mass erase time
t
MErase
4
—
—
ms
FLASH PGM/ERASE to HVEN set up time
t
NVS
10
—
—
μ
s
FLASH high-voltage hold time
t
NVH
5
—
—
μ
s
FLASH high-voltage hold time (mass erase)
t
NVHL
100
—
—
μ
s
FLASH program hold time
t
PGS
5
—
—
μ
s
FLASH program time
t
PROG
t
RCV(2)
t
HV(3)
30
—
40
μ
s
FLASH return to read time
1
—
—
μ
s
FLASH cumulative program HV period
—
—
4
ms
FLASH program endurance
(4)
—
10 k
100k
—
Cycles
FLASH data retention time
(5)
—
15
100
—
Years