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| 型號： | MC80C52XXX-25/883 |
| 廠商： | TEMIC SEMICONDUCTORS |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, MROM, 25 MHz, MICROCONTROLLER, CDIP40 |
| 文件頁數(shù)： | 26/83頁 |
| 文件大小： | 8336K |
| 代理商： | MC80C52XXX-25/883 |
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24
8021G–AVR–03/11
ATmega329P/3290P
Bit 0 – EERE: EEPROM Read Enable
The EEPROM Read Enable Signal EERE is the read strobe to the EEPROM. When the correct
address is set up in the EEAR Register, the EERE bit must be written to a logic one to trigger the
EEPROM read. The EEPROM read access takes one instruction, and the requested data is
available immediately. When the EEPROM is read, the CPU is halted for four cycles before the
next instruction is executed.
The user should poll the EEWE bit before starting the read operation. If a write operation is in
progress, it is neither possible to read the EEPROM, nor to change the EEAR Register.
The calibrated Oscillator is used to time the EEPROM accesses. Table 7-1 lists the typical pro-
gramming time for EEPROM access from the CPU.
The following code examples show one assembly and one C function for writing to the
EEPROM. The examples assume that interrupts are controlled (e.g. by disabling interrupts glob-
ally) so that no interrupts will occur during execution of these functions. The examples also
assume that no Flash Boot Loader is present in the software. If such code is present, the
EEPROM write function must also wait for any ongoing SPM command to finish.
Table 7-1.
EEPROM Programming Time
Symbol
Number of Calibrated
RC Oscillator Cycles
Typical Programming Time
EEPROM write (from CPU)
27,072
3.4ms
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