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參數(shù)資料
| 型號(hào)： | MJD200 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Complementary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
| 中文描述： | 互補(bǔ)硅功率晶體管（互補(bǔ)硅功率晶體管） |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 48K |
| 代理商： | MJD200 |
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MJD200 / MJD210
4/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD210 | Complementary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
| MJD29C | General Purpose Amplifier Low Speed Switching Applications |
| MJD29 | NPN Epitaxial Silicon Transistor(NPN硅外延晶體管) |
| MJD31B | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD31C | COMPLEMENTARY SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD200_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
| MJD200_11 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
| MJD200-1 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD200G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
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