參數(shù)資料
型號(hào)： MJE16204AS
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 6 A, 250 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 34/64頁(yè)
文件大小： 437K
代理商： MJE16204AS
MJE16204
3–817
Motorola Bipolar Power Transistor Device Data
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 7 may be found at any case tem-
perature by using the appropriate curve on Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc.
TC, CASE TEMPERATURE (°C)
0
40
120
160
0.6
POWER
D
ERA
T
ING
FA
CT
OR
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
20
Figure 9. Power Derating
The safe level for these devices is specified as Reverse
Biased Safe Operating Area and represents the voltage–cur-
rent condition allowable during reverse biased turnoff. This
rating is verified under clamped conditions so that the device
is never subjected to an avalanche mode. Figure 8 gives the
RBSOA characteristics.
H.P. 214
OR EQUIV.
P.G.
0
≈ –35 V
50
500
100
–V
2N5337
1
F
+–
+
–
0.02
F
20
100
+V
≈ 11 V
2N6191
A
RB1
RB2
10
F
0.02
F
T1
+V
0 V
–V
A
50
*IB
*IC
T.U.T.
L
MR856
Vclamp
VCC
IC
VCE
IB
IB1
IB2
IC(pk)
VCE(pk)
T1 [
Lcoil (ICpk)
VCC
T1 adjusted to obtain IC(pk)
V(BR)CEO
L = 10 mH
RB2 = ∞
VCC = 20 Volts
RBSOA
L = 200
H
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
Note: Adjust – V to obtain desired VBE(off) at Point A.
*Tektronix
*P–6042 or
*Equivalent
Table 1. RBSOA/V(BR)CEO(sus) Test Circuit
相關(guān)PDF資料
PDF描述
MJE16204BV 6 A, 250 V, NPN, Si, POWER TRANSISTOR
MJE16204BS 6 A, 250 V, NPN, Si, POWER TRANSISTOR
MJE16204BC 6 A, 250 V, NPN, Si, POWER TRANSISTOR
MJE16204AU 6 A, 250 V, NPN, Si, POWER TRANSISTOR
MJE16204AF 6 A, 250 V, NPN, Si, POWER TRANSISTOR
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