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參數(shù)資料
| 型號(hào)： | MJE16204AS |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 56/64頁 |
| 文件大小： | 437K |
| 代理商： | MJE16204AS |
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MJE16204
3–819
Motorola Bipolar Power Transistor Device Data
Figure 12. Deflection Simulator Switching
Waveforms From Circuit in Table 2
IC
0% IB
VCE
tsv
VCE = 20 V
tfi
10% IC(pk)
Figure 13. Definition of Dynamic
Saturation Measurement
TIME (ns)
VCE
DYNAMIC SATURATION TIME
IS MEASURED FROM VCE = 1 V
TO VCE = 5 V
tds
1
4
COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
5
0
3
2
0
90% IC(pk)
DYNAMIC DESATURATIION
The SCANSWITCH series of bipolar power transistors are
specifically designed to meet the unique requirements of hor-
izontal deflection circuits in computer monitor applications.
Historically, deflection transistor design was focused on mini-
mizing collector current fall time. While fall time is a valid
figure of merit, a more important indicator of circuit perfor-
mance as scan rates are increased is a new characteristic,
“dynamic desaturation.” In order to assure a linear collector
current ramp, the output transistor must remain in hard satu-
ration during storage time and exhibit a rapid turn–off transi-
tion. A sluggish transition results in serious consequences.
As the saturation voltage of the output transistor increases,
the voltage across the yoke drops. Roll off in the collector
current ramp results in improper beam deflection and distor-
tion of the image at the right edge of the screen. Design
changes have been made in the structure of the SCANS-
WITCH series of devices which minimize the dynamic desa-
turation interval. Dynamic desaturation has been defined in
terms of the time required for the VCE to rise from 1.0 to
5.0 volts (Figures 12 and 13) and typical performance at opti-
mized drive conditions has been specified. Optimization of
device structure results in a linear collector current ramp, ex-
cellent turn–off switching performance, and significantly low-
er overall power dissipation.
相關(guān)PDF資料 |
PDF描述 |
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| MJE16204BV | 6 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJE16204BS | 6 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJE16204BC | 6 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJE16204AU | 6 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJE16204AF | 6 A, 250 V, NPN, Si, POWER TRANSISTOR |
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