參數(shù)資料
型號: MPC8540VT833LC
廠商: Freescale Semiconductor
文件頁數(shù): 13/104頁
文件大?。?/td> 0K
描述: MPU POWERQUICC III 783FCPBGA
標(biāo)準(zhǔn)包裝: 36
系列: MPC85xx
處理器類型: 32-位 MPC85xx PowerQUICC III
速度: 833MHz
電壓: 1.2V
安裝類型: 表面貼裝
封裝/外殼: 784-BBGA,F(xiàn)CBGA
供應(yīng)商設(shè)備封裝: 783-FCPBGA(29x29)
包裝: 托盤
MPC8540 Integrated Processor Hardware Specifications, Rev. 4.1
16
Freescale Semiconductor
DDR SDRAM
Table 12 provides the PLL and DLL lock times.
6 DDR SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8540.
6.1 DDR SDRAM DC Electrical Characteristics
Table 13 provides the recommended operating conditions for the DDR SDRAM component(s) of the
MPC8540.
Maximum valid-to-high impedance time for actively
driven POR configs with respect to negation of HRESET
5
SYSCLKs
1
Notes:
1.SYSCLK is identical to the PCI_CLK signal and is the primary clock input for the MPC8540. See the MPC8540
Integrated Processor Preliminary Reference Manual for more details.
Table 12. PLL and DLL Lock Times
Parameter/Condition
Min
Max
Unit
Notes
PLL lock times
100
μs
DLL lock times
7680
122,880
CCB Clocks
1, 2
Notes:
1.DLL lock times are a function of the ratio between the output clock and the platform (or CCB) clock. A 2:1 ratio
results in the minimum and an 8:1 ratio results in the maximum.
2. The CCB clock is determined by the SYSCLK
× platform PLL ratio.
Table 13. DDR SDRAM DC Electrical Characteristics
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
1
I/O reference voltage
MVREF
0.49
× GV
DD
0.51
× GV
DD
V2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.18
GVDD + 0.3
V
4
Input low voltage
VIL
–0.3
MVREF – 0.18
V
4
Output leakage current
IOZ
–10
10
μA5
Output high current (VOUT = 1.95 V)
IOH
–15.2
mA
Output low current (VOUT = 0.35 V)
IOL
15.2
mA
Table 11. RESET Initialization Timing Specifications (continued)
Parameter/Condition
Min
Max
Unit
Notes
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