參數(shù)資料
型號: MPSW3725
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN Transistor
中文描述: 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
文件頁數(shù): 1/8頁
文件大小: 67K
代理商: MPSW3725
MPSW3725
NPN Transistor
This device is designed for high current, low impedance line
driver applications. Sourced from Process 26.
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
1.2
V
V
V
A
°
C
-55 to +150
Thermal Characteristics
TA = 25
°
C unless otherwise noted
TO-226
CBE
1999 Fairchild Semiconductor Corporation
Symbol
Characteristic
Max
Units
MPSW3725
1.0
8.0
125
50
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
W
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
M
相關(guān)PDF資料
PDF描述
MPSW56 PNP General Purpose Amplifier
MPSW56 One Watt Amplifier Transistors(PNP Silicon)
MPSW56 One Watt Amplifier Transistors
MPT2N18 N-Channel Power MOSFETs, 3.5A, 150-200V
MPT2N20 SPST, 150mA PC Mount Pushbutton
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPSW3725_Q 功能描述:兩極晶體管 - BJT NPN Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW42 功能描述:兩極晶體管 - BJT 500mA 300V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW42_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt High Voltage Transistor
MPSW42G 功能描述:兩極晶體管 - BJT 500mA 300V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW42RLRA 功能描述:兩極晶體管 - BJT 500mA 300V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2