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參數(shù)資料
| 型號(hào)： | MRF1550FNT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 299K |
| 代理商： | MRF1550FNT1 |
12
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1
CASE 1264A-02
ISSUE C
TO-272-6
PLASTIC
MRF1550FNT1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE H.
4. DIMENSIONS b1 AND b3 DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
5. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
6. DIMENSION A2 APPLIES WITHIN ZONE J ONLY.
D
A
B
M
aaa
D
SEATING
PLANE
2X
b1
A
E1
DRAIN ID
e
4X
D
4X
b2
D1
A
M
aaa
D A
M
aaa
D A
E
DRAIN ID
Y
Y
DIM
A
A1
A2
MIN
0.098
0.038
0.040
MAX
0.106
0.044
0.042
MIN
2.49
0.96
1.02
MAX
2.69
1.12
1.07
MILLIMETERS
INCHES
D
D1
D2
E
E1
E2
F
0.926
0.810 BSC
0.934
23.52
20.57 BSC
23.72
0.492
0.246
0.170 BSC
0.025 BSC
0.500
0.254
12.50
6.25
12.70
6.45
P
b1
b2
0.126
0.193
0.078
0.134
0.199
0.084
3.20
4.90
1.98
3.40
5.05
2.13
b3
c1
0.088
0.007
0.193 BSC
0.004
0.094
0.011
2.24
0.178
2.39
0.279
e
bbb
1
2
3
4
5
6
3
2
1
6
5
4
VIEW Y-Y
0.008
4.90 BSC
0.10
0.20
STYLE 1:
PIN 1. SOURCE (COMMON)
2. DRAIN
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
6. SOURCE (COMMON)
4X
b3
NOTE 5
aaa
4.32 BSC
0.64 BSC
0.608 BSC
15.44 BSC
D2
E2
A
bbb
B
C
A1
c1
2X
P
M
aaa
D A B
ZONE "J"
F
A2
6
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| MRF18030BLR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF18090BR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1550FT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550NT1 | 功能描述:射頻MOSFET電源晶體管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1550NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550T | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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