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參數(shù)資料
| 型號(hào)： | MRF1550FNT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 299K |
| 代理商： | MRF1550FNT1 |
MRF1550NT1 MRF1550FNT1
3
RF Device Data
Freescale Semiconductor
Figure 1. 135 - 175 MHz Broadband Test Circuit
B1
C1
C2
C3
C4, C16
C5
C6
C7, C17
C8, C18
C9, C19
C10
C11, C12
C13
C14
C15
C20
L1
L2
L3
Ferroxcube #VK200
180 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
33 pF, 100 mil Chip Capacitor
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
300 pF, 100 mil Chip Capacitors
10
μ
F, 50 V Electrolytic Capacitors
0.1
μ
F, 100 mil Chip Capacitors
470 pF, 100 mil Chip Capacitor
200 pF, 100 mil Chip Capacitors
22 pF, 100 mil Chip Capacitor
30 pF, 100 mil Chip Capacitor
6.8 pF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
18.5 nH, Coilcraft #A05T
5 nH, Coilcraft #A02T
1 Turn, #24 AWG, 0.250
″
ID
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Z11
Board
1 Turn, #26 AWG, 0.240
″
ID
3 Turn, #24 AWG, 0.180
″
ID
Type N Flange Mounts
5.1
Ω
, 1/4 W Chip Resistor
39
Ω
Chip Resistor (0805)
1 k
Ω
, 1/8 W Chip Resistor
33 k
Ω
, 1/4 W Chip Resistor
1.000
″
x 0.080
″
Microstrip
0.400
″
x 0.080
″
Microstrip
0.200
″
x 0.080
″
Microstrip
0.200
″
x 0.080
″
Microstrip
0.100
″
x 0.223
″
Microstrip
0.160
″
x 0.080
″
Microstrip
0.260
″
x 0.080
″
Microstrip
0.280
″
x 0.080
″
Microstrip
0.270
″
x 0.080
″
Microstrip
0.730
″
x 0.080
″
Microstrip
Glass Teflon
, 31 mils
V
DD
C8
R4
C9
C7
R3
RF
INPUT
RF
OUTPUT
Z2
Z3
Z6
C1
C3
C17
DUT
Z7
Z10
Z11
Z4
L5
Z8
N2
C21
N1
+
Z1
C2
V
GG
C18
+
C10
R2
C19
C20
L1
C5
C4
L2
Z5
C15
C13
C16
C14
C12
C11
Z9
C6
R1
L3
L4
TYPICAL CHARACTERISTICS
P
out
, OUTPUT POWER (WATTS)
I
5
15
20
10
20
0
10
Figure 2. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
10
Figure 3. Input Return Loss
versus Output Power
3.0
P
0
30
5.0
1.0
20
175 MHz
155 MHz
4.0
6.0
2.0
0
60
135 MHz
30
155 MHz
175 MHz
135 MHz
50
40
50
40
60
70
80
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
70
80
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| MRF18030BLR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF18090BR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1550FT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550NT1 | 功能描述:射頻MOSFET電源晶體管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1550NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550T | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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