參數(shù)資料
型號(hào): MRF6P18190HR6
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述: RF功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁(yè)數(shù): 4/12頁(yè)
文件大小: 469K
代理商: MRF6P18190HR6
4
RF Device Data
Freescale Semiconductor
MRF6P18190HR6
Figure 2. MRF6P18190H Test Circuit Component Layout
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C
C13
R3 C12
C11
C10
C9
R4
B3
B4
C8
R5
R2
B1
B2
C3
C7
R1 C6
C5
C4
C15
C16
C17 C18
C21
C19
C20
C14
C22
C30
C28
C27
C23
C24
C25 C26
C29
MRF6P18190
Rev. 2
C2
C1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P21190HR5 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P21190HR6 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P21190HR6_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190H_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor